Current Versus Voltage Characteristics of a Si Based 1-Diode Type Resistive Memory with Cr-SrTiO3 Films
نویسندگان
چکیده
In this paper, in order to suppress unwanted current paths originating from adjacent cells in a passive crossbar array based on resistive random access memory (RRAM) without extrinsic switching devices, 1-diode type RRAM which consists of a 0.2% chromium-doped strontium titanate (Cr-SrTiO3) film deposited on a silicon substrate, was proposed for high packing density, and intrinsic rectifying characteristics from the current versus voltage characteristics were successfully demonstrated.
منابع مشابه
Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode
A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO x /Ni/n(+)-Si was proposed to suppress sneak current where TaN/ZrTiO x /Ni can be regarded as a resistive-switching random access memory (RRAM) device while Ni/n(+)-Si acts as an Schottky diode. This is the first RRAM cell structure that employs metal/semiconductor Schottky diode f...
متن کاملa-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths
The realization of ultra-low power Si-based resistive switching memory technology will be a milestone in the development of next generation non-volatile memory. Here we show that a high performance and ultra-low power resistive random access memory (RRAM) based on an Al/a-SiNx:H/p(+)-Si structure can be achieved by tuning the Si dangling bond conduction paths. We reveal the intrinsic relationsh...
متن کاملTwo-Terminal Write-Once-Read-Many-Times Memory Device Based on Charging-Controlled Current Modulation in Al/Al-Rich Al2O3/p-Si Diode
A write-once-read-many-times (WORM) memory device was realized based on the charging-controlled modulation in the current conduction of Al/Al-rich Al2O3/p-type Si diode. A large increase in the reverse current of the diode could be achieved with a negative charging voltage, e.g., charging at −25 V for 1 ms results in a current increase by about four orders. Memory states of the WORM device coul...
متن کاملA low switching voltage organic-on-inorganic heterojunction memory element utilizing a conductive polymer fuse on a doped silicon substrate
We present a simple, nonvolatile, write-once-read-many-times ~WORM! memory device utilizing an organic-on-inorganic heterojunction ~OI–HJ! diode with a conductive polymer fuse consisting of polyethylene dioxythiophene:polysterene sulfonic acid ~PEDOT:PSS! forming one side of the rectifying junction. Current transients are used to change the fuse from a conducting to a nonconducting state to rec...
متن کاملDual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions
The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO subs...
متن کامل